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Contamination and removal mechanism in semiconductor manufacturing process

Contamination and removal mechanism in semiconductor manufacturing process

Cleanliness is one of the most important parameters in the semiconductor manufacturing process. As the width of semiconductor grids decreases, the requirements for pollution control become higher and higher. A small pollution may cause a chip to fail and be scrapped, so controlling pollution is one of the most critical steps in the semiconductor manufacturing process. In general, the classification of pollutants in the semiconductor manufacturing process is roughly as follows:

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2019

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11

Kunshan Zhicheng strives to be an envoy of environmental protection--exhaust gas treatment equipment

Kunshan Zhicheng strives to be an envoy of environmental protection--exhaust gas treatment equipment

Today's world is changing with each passing day. Semiconductors have penetrated into every aspect of people's lives, and everything in life cannot be separated from semiconductors. In the semiconductor manufacturing process, various processes require the use of chemical gases, and various volatile chemical liquids are also required in the cleaning process. The pollution caused in these processes will cause very serious pollution to the environment if it is discharged directly.

06

2019

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11

Semiconductor wafer cleaning process introduction!

Semiconductor wafer cleaning process introduction!

Contamination determines the final yield of the chip to a certain extent, and the semiconductor cleaning process is the most critical step in the semiconductor manufacturing process. In general, in the semiconductor manufacturing process, the cleaning process will account for more than one-third of the total process steps.

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2019

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QDR cleaning--an essential cleaning process in tank cleaning equipment

QDR cleaning--an essential cleaning process in tank cleaning equipment

QDR spray water filling time and drainage time have a great influence on the quality of wafer cleaning. Because the surface of the wafer is exposed to the air and will contact oxygen molecules or water vapor in the air, a very thin oxide layer (about 0.5~1 nm) will grow at room temperature. The thickness of this layer of natural oxide is related to the exposure The time in the air is related to the length of time. Therefore, the longer the spray is filled with water, the longer the wafer will be exposed to the air, so the thicker the oxide layer will be formed, which is very unfavorable for wafer cleaning. of. The shorter the QDR drainage time, the greater the drainage flow rate, which is beneficial for the deionized water to take away the particulate impurities on the wafer surface. Therefore, in the QDR design, it is necessary to shorten the spraying water filling time and drainage time as much as possible to achieve fast flushing and fast discharge, and the overall efficiency will also be improved.

06

2019

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11

Kunshan Zhicheng developed the fourth generation horizontal centrifugal dryer

Kunshan Zhicheng developed the fourth generation horizontal centrifugal dryer

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2019

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11

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