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Single Wafer Cleaner

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Single Wafer Cleaner

  • Description
  • Applications: RCA cleaning, pre-deposition cleaning, post-etch cleaning, post-CMP cleaning,wet etch, pre-EPI cleaning et al.
    Wafer size: 100 mm ~ 300 mm
    Features & configurations:
    4~16 chambers, supporting customization
    2~4 MIF/FOUP
    Supporting chemistry C.C.S.S. and L.C.S.S.
    Heating control, concentration control, flow rate control, pressure control et al.
    Separated exhaust for acid, base and organics
    Chemistry reclaim
    High-definition camera, E-flow (option)
    SECS/GEM communication
    Process Specification:
    Etch non-uniformity: WiW≤3%;WtW≤3%;RtR≤3%
    Particle adders: PA<20ea@0.09um (SiO2 wafer with incoming particle count <50ea)
    Metal contamination: <5E9 atoms/cm2

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